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Nexperia PHN210T,118

NEXPERIA - PHN210T, 118 - MOSFET Transistor, Dual N Channel, 2.2 A, 30 V, 0.08 ohm, 10 V, 2 V

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
100 mΩ

Dimensions

Height
1.45 mm
Length
5 mm
Width
4 mm

Physical

Case/Package
SOT-96-1
Number of Pins
8

Supply Chain

Lifecycle Status
Obsolete

Technical

Continuous Drain Current (ID)
3.4 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
100 mΩ
Drain to Source Voltage (Vdss)
30 V
Dual Supply Voltage
30 V
Element Configuration
Dual
Fall Time
15 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
250 pF
Max Dual Supply Voltage
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
-65 °C
Min Operating Temperature
-65 °C
Nominal Vgs
2 V
Packaging
Tape & Reel
Power Dissipation
2 W
Rds On Max
100 mΩ
Rise Time
8 ns
Termination
Compliant
Threshold Voltage
IBS
Turn-Off Delay Time
21 ns
Turn-On Delay Time
6 ns

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