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Nexperia PBSS9110T,215

Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1 mm
Length
3 mm
Width
1.4 mm

Physical

Case/Package
SOT-23
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
5%

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
120 V
Collector Emitter Breakdown Voltage
100 V
Collector Emitter Saturation Voltage
320 mV
Collector Emitter Voltage (VCEO)
100 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
100 MHz
Gain Bandwidth Product
100 MHz
hFE Min
150
Max Breakdown Voltage
100 V
Max Collector Current
1 A
Max Frequency
100 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
480 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Cut Tape (CT)
Polarity
PNP
Power Dissipation
480 mW
Test Current
5 mA
Tolerance
IBS
Transition Frequency
100 MHz
Zener Voltage
4.535924 g

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