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Nexperia PBRN123ET,215

Pre-Biased Bipolar Transistor (BJT) NPN - 40 V 600 mA 250 mW SMT TO-236AB

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
NPN

Dimensions

Height
1 mm
Length
3 mm
Width
1.4 mm

Physical

Case/Package
TO-236-3
Mount
-65 °C
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Collector Emitter Breakdown Voltage
40 V
Collector Emitter Saturation Voltage
1.15 V
Collector Emitter Voltage (VCEO)
40 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
10 V
Max Breakdown Voltage
40 V
Max Collector Current
600 mA
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-65 °C
Packaging
Digi-Reel®
Polarity
Digi-Reel®

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