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Nexperia PBHV8118T,215

PBHV8118T Series 180 V 1 A 300 mW NPN SMT High Voltage Transistor - SOT-23

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
1.1 mm

Physical

Case/Package
TO-236-3
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Ambient Temperature Range High
150 °C
Collector Base Voltage (VCBO)
400 V
Collector Emitter Breakdown Voltage
180 V
Collector Emitter Saturation Voltage
33 mV
Collector Emitter Voltage (VCEO)
180 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Frequency
30 MHz
Gain Bandwidth Product
30 MHz
hFE Min
50
Max Breakdown Voltage
180 V
Max Collector Current
1 A
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
300 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Digi-Reel®
Polarity
Digi-Reel®
Power Dissipation
300 mW
Transition Frequency
30 MHz

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