跳转到主要内容

Nexperia NX7002AKAR

Power Field-Effect Transistor, 0.3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

产品详情

Find similar products  

Compliance

Radiation Hardening
No
RoHS
4.5 Ω

Physical

Case/Package
SOT-23-3
Mount
-55 °C
Number of Pins
3

Technical

Continuous Drain Current (ID)
300 mA
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
6.2 Ω
Drain to Source Voltage (Vdss)
6.2 Ω
Element Configuration
Single
Fall Time
14 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
17 pF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Rds On Max
4.5 Ω
Rise Time
7 ns
Turn-Off Delay Time
20 ns
Turn-On Delay Time
Compliant

合规性文件

购买

Call or Request Quote for Pricing
询价

Need Assistance?

Contact Us