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Nexperia NX3008NBKMB,315

Mosfet Transistor, N Channel, 530 Ma, 30 V, 1 Ohm, 4.5 V, 900 Mv Rohs Compliant: Yes

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Compliance

Radiation Hardening
715 mW
RoHS
1.4 Ω

Physical

Case/Package
DFN
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
530 mA
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
1.4 mΩ
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Single
Fall Time
19 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
50 pF
Max Dual Supply Voltage
30 V
Max Operating Temperature
150 °C
Max Power Dissipation
360 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Digi-Reel®
Power Dissipation
Digi-Reel®
Rds On Max
1.4 Ω
Rise Time
11 ns
Turn-Off Delay Time
69 ns
Turn-On Delay Time
Compliant

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