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Nexperia BUK969R3-100E,118

Transistor MOSFET N-Channel 100V 100A 3-Pin D2PAK

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Compliance

Radiation Hardening
No
RoHS
8.9 mΩ

Physical

Case/Package
SOT
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
100 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
25.7 mΩ
Drain to Source Voltage (Vdss)
100 V
Fall Time
93.4 ns
Gate to Source Voltage (Vgs)
10 V
Input Capacitance
11.65 nF
Max Dual Supply Voltage
100 V
Max Operating Temperature
175 °C
Max Power Dissipation
263 W
Min Operating Temperature
-55 °C
Packaging
Cut Tape (CT)
Power Dissipation
263 W
Rds On Max
8.9 mΩ
Rise Time
95.1 ns
Turn-Off Delay Time
118 ns
Turn-On Delay Time
39.5 ns

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