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Nexperia BSH205G2R

BSH205G2 Series 20 V 2 A 170 mOhm SMT P-Channel TrenchMOS FET - SOT-23

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Compliance

Lead Free
Lead Free
RoHS
Compliant

Dimensions

Height
1.1 mm

Physical

Case/Package
TO-236-3
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Ambient Temperature Range High
150 °C
Continuous Drain Current (ID)
-2.3 A
Drain to Source Breakdown Voltage
-20 V
Drain to Source Resistance
120 mΩ
Drain to Source Voltage (Vdss)
-20 V
Fall Time
16 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
418 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
480 mW
Min Operating Temperature
-55 °C
Number of Channels
1
Packaging
Tape & Reel (TR)
Power Dissipation
890 mW
Rds On Max
170 mΩ
Rise Time
14 ns
Turn-Off Delay Time
43 ns
Turn-On Delay Time
5 ns

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