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Nexperia BSH103,235

BSH103 Series 30 V 400 mOhm 0.5 W N-Ch Enhancement Mode MOS Transistor - SOT-23

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Compliance

Radiation Hardening
No
RoHS
400 mΩ

Physical

Case/Package
SOT
Contact Plating
Tin
Number of Pins
-55 °C

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
850 mA
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
400 mΩ
Drain to Source Voltage (Vdss)
400 mΩ
Element Configuration
Single
Fall Time
3.5 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
83 pF
Max Dual Supply Voltage
30 V
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Packaging
Tape & Reel
Power Dissipation
500 mW
Rds On Max
400 mΩ
Rise Time
3.5 ns
Turn-Off Delay Time
20 ns
Turn-On Delay Time
2.5 ns

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