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Nexperia BCM857BS,115

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.1 mm
Length
2.2 mm
Width
1.35 mm

Physical

Case/Package
SOT-363
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
6

Supply Chain

Lifecycle Status
Production

Technical

Ambient Temperature Range High
150 °C
Collector Base Voltage (VCBO)
-50 V
Collector Emitter Breakdown Voltage
-45 V
Collector Emitter Saturation Voltage
-200 mV
Collector Emitter Voltage (VCEO)
-45 V
Current
1 A
Element Configuration
Dual
Emitter Base Voltage (VEBO)
-5 V
Frequency
175 MHz
Gain Bandwidth Product
175 MHz
hFE Min
200
Max Breakdown Voltage
45 V
Max Collector Current
-100 mA
Max Frequency
175 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
300 mW
Min Operating Temperature
-65 °C
Number of Elements
2
Polarity
PNP
Power Dissipation
200 mW
Test Current
5 mA
Tolerance
5 %
Transition Frequency
175 MHz
Voltage
45 V
Zener Voltage
39 V

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