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Nexperia BC857AM,315

BC857M Series 45V 100mA 430mW SMT PNP General-Purpuse Transistor - DFN-1006-3

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Compliance

Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
500 µm

Physical

Case/Package
SOT-883
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Ambient Temperature Range High
150 °C
Collector Base Voltage (VCBO)
-50 V
Collector Emitter Breakdown Voltage
45 V
Collector Emitter Saturation Voltage
-400 mV
Collector Emitter Voltage (VCEO)
-45 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
-5 V
Frequency
100 MHz
Gain Bandwidth Product
100 MHz
hFE Min
500 µm
Max Collector Current
-100 mA
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
430 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
PNP
Power Dissipation
430 mW
Transition Frequency
100 MHz

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