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Nexperia BC807DS,115

Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
6.35 mm
Length
6.35 mm
Width
6.35 mm

Physical

Case/Package
TSOP
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
6
Weight
4.535924 g

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
50 V
Collector Emitter Breakdown Voltage
45 V
Collector Emitter Voltage (VCEO)
45 V
Element Configuration
Dual
Emitter Base Voltage (VEBO)
5 V
Forward Current
120 mA
Forward Voltage
380 mV
Frequency
80 MHz
Gain Bandwidth Product
80 MHz
hFE Min
40
Max Breakdown Voltage
45 V
Max Collector Current
500 mA
Max Forward Surge Current (Ifsm)
200 mA
Max Operating Temperature
150 °C
Max Power Dissipation
600 mW
Max Repetitive Reverse Voltage (Vrrm)
40 V
Min Operating Temperature
-65 °C
Number of Elements
2
Packaging
Cut Tape
Polarity
PNP
Power Dissipation
600 mW
Transition Frequency
80 MHz

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