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Microchip JANS2N2222AUA

Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

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Compliance

Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
1.9 mm

Physical

Mount
Surface Mount
Number of Pins
4

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
75 V
Collector Emitter Breakdown Voltage
50 V
Collector Emitter Saturation Voltage
1 V
Collector Emitter Voltage (VCEO)
50 V
Emitter Base Voltage (VEBO)
6 V
hFE Min
100
Max Collector Current
800 mA
Max Junction Temperature (Tj)
200 °C
Max Operating Temperature
200 °C
Max Power Dissipation
500 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
500 mW

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