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Microchip JAN2N930

Trans GP BJT NPN 45V 0.03A 300mW 3-Pin TO-18 Bag

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Compliance

Radiation Hardening
No
RoHS
Non-Compliant

Dimensions

Height
6.6 mm

Physical

Case/Package
TO-18
Contact Plating
Lead, Tin
Mount
Through Hole
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
60 V
Collector Emitter Breakdown Voltage
45 V
Collector Emitter Saturation Voltage
1 V
Collector Emitter Voltage (VCEO)
45 V
Emitter Base Voltage (VEBO)
6 V
hFE Min
100
Max Collector Current
30 mA
Max Junction Temperature (Tj)
200 °C
Max Operating Temperature
125 °C
Max Power Dissipation
300 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Bulk
Polarity
NPN
Power Dissipation
300 mW

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