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Microchip ARF465BG

RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET

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Compliance

Radiation Hardening
No
RoHS
Compliant

Physical

Case/Package
TO-247
Mount
Through Hole

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
6 A
Current Rating
6 A
Fall Time
12 ns
Frequency
40.68 MHz
Gain
15 dB
Gate to Source Voltage (Vgs)
30 V
Max Operating Temperature
150 °C
Max Power Dissipation
250 W
Min Operating Temperature
-55 °C
Number of Elements
1
Output Power
150 W
Packaging
Bulk
Rise Time
5 ns
Test Voltage
300 V
Turn-Off Delay Time
21 ns
Turn-On Delay Time
7 ns
Voltage Rating
1.2 kV

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