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Microchip APT50M50JVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
50 mΩ

Dimensions

Height
12.2 mm

Physical

Case/Package
SOT-227
Mount
-55 °C
Number of Pins
4

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
77 A
Current Rating
77 A
Drain to Source Breakdown Voltage
500 V
Drain to Source Resistance
50 mΩ
Drain to Source Voltage (Vdss)
50 mΩ
Fall Time
12 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
19.6 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
700 W
Rds On Max
50 mΩ
Rise Time
20 ns
Turn-Off Delay Time
85 ns
Turn-On Delay Time
25 ns
Voltage Rating (DC)
Compliant

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