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Microchip 2N2222AE3

Bipolar (BJT) Transistor NPN 50V 800mA 500mW Through Hole TO-18

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Compliance

Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
5.33 mm

Physical

Case/Package
TO-18
Mount
Through Hole
Number of Pins
3

Technical

Collector Base Voltage (VCBO)
75 V
Collector Emitter Breakdown Voltage
50 V
Collector Emitter Saturation Voltage
1 V
Collector Emitter Voltage (VCEO)
50 V
Emitter Base Voltage (VEBO)
6 V
hFE Min
100
Max Collector Current
800 mA
Max Junction Temperature (Tj)
200 °C
Max Operating Temperature
200 °C
Max Power Dissipation
500 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Bulk
Power Dissipation
500 mW

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