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IXYS IXTY02N120P

N-Channel Enhancement Mode Avalanche Rated MOSFET N-CH 1200V 0.2A DPAK

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Compliance

Lead Free
Lead Free
Radiation Hardening
19075656
RoHS
Compliant

Physical

Case/Package
TO-252-3
Mount
-55 °C

Technical

Continuous Drain Current (ID)
200 mA
Drain to Source Breakdown Voltage
1.2 kV
Drain to Source Resistance
75 Ω
Drain to Source Voltage (Vdss)
75 Ω
Element Configuration
Single
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
104 pF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
33 W
Rds On Max
75 Ω

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