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IXYS IXFN80N50

Single N-Channel 500 Vds 55 mOhm 780 W Power Mosfet - SOT-227B

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
55 mΩ

Physical

Case/Package
SOT-227-4
Mount
-55 °C
Number of Pins
4
Weight
36 mg

Technical

Continuous Drain Current (ID)
80 A
Current Rating
80 A
Drain to Source Breakdown Voltage
500 V
Drain to Source Resistance
55 mΩ
Drain to Source Voltage (Vdss)
55 mΩ
Dual Supply Voltage
500 V
Fall Time
27 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
9.89 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
4.5 V
Number of Elements
1
Packaging
Bulk
Power Dissipation
780 W
Rds On Max
55 mΩ
Recovery Time
250 ns
Resistance
55 mΩ
Reverse Recovery Time
250 ns
Rise Time
55 mΩ
Termination
Screw
Threshold Voltage
70 ns
Turn-Off Delay Time
102 ns
Voltage Rating (DC)
IBS

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