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IXYS IXFK80N60P3

Mosfet Transistor, N Channel, 80 A, 600 V, 0.077 Ohm, 10 V, 5 V Rohs Compliant: Yes

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
70 mΩ

Dimensions

Height
26.16 mm
Length
19.96 mm
Width
5.13 mm

Physical

Case/Package
TO-264
Mount
Through Hole
Number of Pins
3

Technical

Continuous Drain Current (ID)
80 A
Drain to Source Breakdown Voltage
600 V
Drain to Source Resistance
70 mΩ
Drain to Source Voltage (Vdss)
600 V
Element Configuration
Single
Fall Time
8 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
13.1 nF
Max Operating Temperature
150 °C
Max Power Dissipation
1.3 kW
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
1.3 kW
Rds On Max
70 mΩ
Rise Time
25 ns
Threshold Voltage
5 V
Turn-Off Delay Time
Compliant
Turn-On Delay Time
IBS

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