跳转到主要内容

IXYS IXFH60N50P3

Mosfet Transistor, N Channel, 60 A, 500 V, 0.1 Ohm, 10 V, 5 V Rohs Compliant: Yes

产品详情

Find similar products  

Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
100 mΩ

Dimensions

Height
21.46 mm
Length
16.26 mm
Width
5.3 mm

Physical

Case/Package
TO-247
Mount
Through Hole
Number of Pins
3

Technical

Continuous Drain Current (ID)
60 A
Drain to Source Breakdown Voltage
500 V
Drain to Source Resistance
100 mΩ
Drain to Source Voltage (Vdss)
500 V
Element Configuration
Single
Fall Time
8 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
6.25 nF
Max Operating Temperature
150 °C
Max Power Dissipation
1.04 kW
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
1.04 kW
Rds On Max
100 mΩ
Rise Time
16 ns
Threshold Voltage
5 V
Turn-Off Delay Time
37 ns
Turn-On Delay Time
18 ns

购买

Call or Request Quote for Pricing
询价

Need Assistance?

Contact Us