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International Rectifier IRF640

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...

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Compliance

Lead Free
Contains Lead
Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
9.01 mm
Length
10.41 mm
Width
4.7 mm

Physical

Case/Package
TO-220
Contact Plating
Lead, Tin
Mount
Through Hole
Number of Pins
3
Weight
6.000006 g

Technical

Continuous Drain Current (ID)
18 A
Current Rating
18 A
Drain to Source Breakdown Voltage
200 V
Drain to Source Resistance
180 mΩ
Drain to Source Voltage (Vdss)
200 V
Element Configuration
Single
Fall Time
36 ns
Gate to Source Voltage (Vgs)
20 V
Max Operating Temperature
150 °C
Max Power Dissipation
125 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Bulk
Power Dissipation
125 W
Rise Time
51 ns
Turn-Off Delay Time
45 ns
Turn-On Delay Time
14 ns
Voltage Rating (DC)
200 V

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