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Infineon IPD65R1K4C6ATMA1

Transistor: N-MOSFET; unipolar; 650V; 2.8A; 28.4W; PG-TO252-3

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Compliance

Halogen Free
Halogen Free
Lead Free
Contains Lead
RoHS
Compliant

Physical

Case/Package
TO-252-3
Mount
Surface Mount
Number of Pins
3
Weight
3.949996 g

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
3.2 A
Drain to Source Breakdown Voltage
650 V
Drain to Source Resistance
1.4 Ω
Drain to Source Voltage (Vdss)
650 V
Element Configuration
Single
Fall Time
18.2 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
225 pF
Max Dual Supply Voltage
650 V
Max Operating Temperature
150 °C
Max Power Dissipation
28 W
Min Operating Temperature
-55 °C
Number of Channels
1
On-State Resistance
1.4 Ω
Package Quantity
2500
Packaging
Tape & Reel
Power Dissipation
28 W
Rds On Max
1.4 Ω
Rise Time
5.9 ns
Turn-Off Delay Time
33 ns
Turn-On Delay Time
7.7 ns

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