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Infineon FF8MR12W2M1PB11BPSA1

Transistor Silicon Carbide MOSFET Array Module Dual N-CH 1200V AG-Easy2B Tray

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Dimensions

Height
13.67 mm

Technical

Continuous Drain Current (ID)
150 A
Drain to Source Breakdown Voltage
1.2 kV
Drain to Source Resistance
7.5 mΩ
Drain to Source Voltage (Vdss)
1.2 kV
Gate to Source Voltage (Vgs)
20 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
-40 °C
Number of Channels
2
Power Dissipation
20 mW
Turn-Off Delay Time
57 ns
Turn-On Delay Time
21.5 ns

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