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Infineon FF450R12KT4HOSA1

IGBT Array & Module Transistor, Dual NPN, 580 A, 1.75 V, 2.4 kW, 1.2 kV, Module

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Compliance

Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
31.4 mm
Length
106.4 mm
Width
61.4 mm

Physical

Case/Package
Module
Mount
Panel, Screw
Number of Pins
7

Supply Chain

Lifecycle Status
Production

Technical

Collector Emitter Breakdown Voltage
1.2 kV
Collector Emitter Saturation Voltage
1.75 V
Collector Emitter Voltage (VCEO)
1.2 kV
Continuous Collector Current
450 A
Element Configuration
Dual
Max Collector Current
580 A
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2.4 kW
Min Operating Temperature
-40 °C
Package Quantity
10
Polarity
NPN
Power Dissipation
2.4 kW
Turn-Off Delay Time
450 ns
Turn-On Delay Time
160 ns

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