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Infineon FF3MR12KM1HOSA1

Transistor Silicon Carbide MOSFET Array Module Dual N-CH 1200V AG-62MM Tray

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Dimensions

Height
30.5 mm

Technical

Continuous Drain Current (ID)
375 A
Drain to Source Resistance
2.83 mΩ
Drain to Source Voltage (Vdss)
2.83 mΩ
Gate to Source Voltage (Vgs)
20 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
150 °C
Number of Channels
-40 °C
Turn-Off Delay Time
69.3 ns
Turn-On Delay Time
79.4 ns

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