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Infineon FF200R17KE4HOSA1

IGBT Array & Module Transistor, Dual NPN, 310 A, 1.95 V, 1.25 kW, 1.7 kV, Module

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Compliance

Halogen Free
Not Halogen Free
Lead Free
Lead Free
RoHS
Non-Compliant

Dimensions

Height
31.4 mm

Physical

Number of Pins
-40 °C

Supply Chain

Lifecycle Status
Production

Technical

Collector Emitter Saturation Voltage
1.95 V
Collector Emitter Voltage (VCEO)
1.7 kV
Continuous Collector Current
310 A
Element Configuration
Dual
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
150 °C
Package Quantity
10
Polarity
NPN
Power Dissipation
1.25 kW
Turn-Off Delay Time
700 ns
Turn-On Delay Time
240 ns

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