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Infineon FF11MR12W1M1PB11BPSA1

Transistor Silicon Carbide MOSFET Array Module Dual N-CH 1200V AG-Easy1B Tray

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Dimensions

Height
12.35 mm

Technical

Continuous Drain Current (ID)
100 A
Drain to Source Breakdown Voltage
1.2 kV
Drain to Source Resistance
11.3 mΩ
Drain to Source Voltage (Vdss)
1.2 kV
Gate to Source Voltage (Vgs)
20 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
-40 °C
Number of Channels
2
Turn-Off Delay Time
64.3 ns
Turn-On Delay Time
25.1 ns

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