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Infineon F423MR12W1M1B11BOMA1

Transistor MOSFET Array Quad N-CH 1200V AG-EASY1BM-2 Tray

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Dimensions

Height
13.95 mm

Technical

Continuous Drain Current (ID)
50 A
Drain to Source Breakdown Voltage
1.2 kV
Drain to Source Resistance
22.5 mΩ
Drain to Source Voltage (Vdss)
1.2 kV
Gate to Source Voltage (Vgs)
20 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
-40 °C
Number of Channels
4
Power Dissipation
20 mW
Turn-Off Delay Time
49.4 ns
Turn-On Delay Time
14.3 ns

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