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Infineon BTS134DATMA1

N channel vertical power FET in Smart SIPMOS technology, PG-TO252-3, RoHS

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Compliance

Halogen Free
Halogen Free
Lead Free
Contains Lead
Radiation Hardening
No
RoHS
Compliant

Physical

Case/Package
TO-252
Mount
-40 °C
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Drain to Source Voltage (Vdss)
42 V
Max Dual Supply Voltage
42 V
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-40 °C
Nominal Input Voltage
42 V
Number of Channels
1
Number of Outputs
1
On-State Resistance
50 mΩ
Output Current
50 mΩ
Output Voltage
42 V
Package Quantity
3.5 A
Packaging
Tape & Reel
Power Dissipation
43 W

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