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Infineon BSZ110N08NS5ATMA1

BSZ110N08NS5 Series 80 V 40 A OptiMOSTM5 Power-Transistor - PG-TSDSON-8 FL

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Compliance

Halogen Free
Halogen Free
Lead Free
Contains Lead
RoHS
11 mΩ

Physical

Mount
Surface Mount
Number of Pins
8

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
40 A
Drain to Source Breakdown Voltage
80 V
Drain to Source Resistance
16.3 mΩ
Drain to Source Voltage (Vdss)
80 V
Element Configuration
Single
Fall Time
3 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1 nF
Max Dual Supply Voltage
80 V
Max Operating Temperature
150 °C
Max Power Dissipation
50 W
Min Operating Temperature
-55 °C
Number of Channels
1
On-State Resistance
11 mΩ
Package Quantity
11 mΩ
Packaging
5000
Power Dissipation
50 W
Rds On Max
11 mΩ
Rise Time
3 ns
Turn-Off Delay Time
15 ns
Turn-On Delay Time
Compliant

合规性文件

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