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Infineon BSZ086P03NS3GATMA1

Transistor: P-MOSFET; unipolar; -30V; -40A; 0.0086ohm; 69W; -55+150 deg.C; SMD; TSDSON8

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Compliance

Halogen Free
Halogen Free
Lead Free
Contains Lead
REACH SVHC
No SVHC
RoHS
Compliant

Physical

Mount
-55 °C
Number of Pins
8

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
13.5 A
Drain to Source Resistance
6.5 mΩ
Drain to Source Voltage (Vdss)
6.5 mΩ
Fall Time
8 ns
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
3.19 nF
Max Dual Supply Voltage
-30 V
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
On-State Resistance
8.6 mΩ
Package Quantity
8.6 mΩ
Packaging
Tape & Reel
Power Dissipation
5000
Rise Time
46 ns
Threshold Voltage
-2.5 V
Turn-Off Delay Time
35 ns
Turn-On Delay Time
16 ns

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