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Infineon BSZ010NE2LS5ATMA1

Power Transistor MOSFET N-Channel Enhancement 25V 40A 8-Pin TSDSON

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Dimensions

Height
1.1 mm

Technical

Continuous Drain Current (ID)
40 A
Drain to Source Breakdown Voltage
25 V
Drain to Source Resistance
800 µΩ
Drain to Source Voltage (Vdss)
800 µΩ
Gate to Source Voltage (Vgs)
16 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
150 °C
Number of Channels
-55 °C
Power Dissipation
69 W
Turn-Off Delay Time
19.3 ns
Turn-On Delay Time
12.6 ns

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