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Infineon BSS806NEH6327XTSA1

Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.057ohm; 0.5W; -55+150 deg.C; SMD; SOT23; AEC-Q100

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Compliance

Halogen Free
Halogen Free
Lead Free
Lead Free
RoHS
Compliant

Dimensions

Height
1 mm
Length
2.9 mm
Width
1.3 mm

Physical

Case/Package
SOT-23
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
1.437803 g

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
2.3 A
Drain to Source Resistance
57 mΩ
Drain to Source Voltage (Vdss)
20 V
Element Configuration
Single
Fall Time
3.7 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
370 pF
Max Dual Supply Voltage
20 V
Max Operating Temperature
150 °C
Max Power Dissipation
500 mW
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
57 mΩ
Package Quantity
3000
Packaging
Tape & Reel
Power Dissipation
500 mW
Rds On Max
57 mΩ
Rise Time
9.9 ns
Turn-Off Delay Time
12 ns
Turn-On Delay Time
7.5 ns

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