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Infineon BSS138WL6327

Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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Compliance

Radiation Hardening
No
RoHS
Compliant

Physical

Case/Package
SOT-323-3
Mount
Surface Mount
Number of Pins
3

Technical

Continuous Drain Current (ID)
280 mA
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
3.5 Ω
Drain to Source Voltage (Vdss)
60 V
Element Configuration
Single
Fall Time
3 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
43 pF
Max Operating Temperature
150 °C
Max Power Dissipation
500 mW
Min Operating Temperature
-55 °C
Power Dissipation
500 mW
Rds On Max
3.5 Ω
Rise Time
3 ns
Turn-Off Delay Time
6.7 ns
Turn-On Delay Time
2.2 ns

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