跳转到主要内容

Infineon BSP170P H6327

Transistor: P-MOSFET; unipolar; -60V; -1.9A; 0.3ohm; 1.8W; -55+150 deg.C; SMD; SOT223; AEC-Q100

产品详情

Find similar products  

Compliance

Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
1.8 mm

Physical

Case/Package
SOT-223-3
Mount
Surface Mount

Technical

Continuous Drain Current (ID)
-1.9 A
Drain to Source Breakdown Voltage
-60 V
Drain to Source Resistance
239 mΩ
Drain to Source Voltage (Vdss)
-60 V
Fall Time
60 ns
Gate to Source Voltage (Vgs)
20 V
Manufacturer Package Identifier
PG-SOT223-4
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Packaging
Tape & Reel
Power Dissipation
1.8 W
Rise Time
28 ns
Turn-Off Delay Time
92 ns
Turn-On Delay Time
14 ns

合规性文件

购买

Call or Request Quote for Pricing
询价

Need Assistance?

Contact Us