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Infineon BSC886N03LSGATMA1

Single N-Channel 30 V 6 mOhm 20 nC OptiMOS Power Mosfet - TDSON-8

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Compliance

REACH SVHC
No SVHC
RoHS
6 mΩ

Dimensions

Height
1.1 mm

Physical

Mount
-55 °C
Number of Pins
8

Technical

Continuous Drain Current (ID)
32 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
1.3 mΩ
Drain to Source Voltage (Vdss)
1.3 mΩ
Fall Time
3 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
2.1 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
2.5 W
Rds On Max
6 mΩ
Rise Time
3.2 ns
Threshold Voltage
2.2 V
Turn-Off Delay Time
18 ns
Turn-On Delay Time
Compliant

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