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Infineon BSC670N25NSFDATMA1

BSC670N25NSFD Series 250 V 67 mOhm OptiMOSTM3 Power-Transistor PG-TDSON-8

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Compliance

RoHS
5000

Dimensions

Height
1.1 mm

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
24 A
Drain to Source Breakdown Voltage
250 V
Drain to Source Resistance
59 mΩ
Drain to Source Voltage (Vdss)
250 V
Gate to Source Voltage (Vgs)
20 V
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Min Operating Temperature
-55 °C
Number of Channels
1
On-State Resistance
67 mΩ
Package Quantity
5000
Packaging
Tape & Reel
Power Dissipation
150 W
Turn-Off Delay Time
19 ns
Turn-On Delay Time
8 ns

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