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Infineon BFS481H6327XTSA1

Transistor: NPN x2, bipolar, RF, 12V, 20mA, 175mW, SOT363

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Compliance

Halogen Free
Halogen Free
Lead Free
Lead Free
RoHS
Compliant

Dimensions

Height
800 µm
Length
2 mm
Width
1.25 mm

Physical

Case/Package
SOT
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
6

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
20 V
Collector Emitter Breakdown Voltage
12 V
Collector Emitter Voltage (VCEO)
12 V
Emitter Base Voltage (VEBO)
2 V
Frequency
8 GHz
Gain
20 dB
Max Breakdown Voltage
12 V
Max Collector Current
20 mA
Max Operating Temperature
150 °C
Max Power Dissipation
175 mW
Min Operating Temperature
-65 °C
Noise Figure
0.9 dB
Number of Elements
2
Package Quantity
3000
Packaging
Tape & Reel
Polarity
NPN
Power Dissipation
175 mW
Power Gain
20 dB
Transition Frequency
8 GHz

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