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Infineon BFR840L3RHESDE6327XTSA1

RF Transistor NPN 2.6V 35mA 75GHz 75mW Surface Mount PG-TSLP-3

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Compliance

Halogen Free
Halogen Free
Lead Free
Lead Free
RoHS
Compliant

Physical

Contact Plating
Gold
Mount
-55 °C
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
2.9 V
Collector Emitter Breakdown Voltage
2.6 V
Collector Emitter Voltage (VCEO)
2.25 V
Continuous Collector Current
35 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
2.9 V
Frequency
75 GHz
Gain
27 dB
Max Breakdown Voltage
2.6 V
Max Collector Current
35 mA
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Noise Figure
0.5 dB
Package Quantity
15000
Packaging
Tape & Reel
Polarity
NPN
Power Gain
26.5 dB
Transition Frequency
75 GHz

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