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Infineon BFR193WH6327XTSA1

Infineon BFR193WH6327 NPN RF Bipolar Transistor, 0.08 A, 12 V, 3-Pin SOT-323

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Compliance

Halogen Free
Halogen Free
Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Physical

Case/Package
SOT
Mount
Surface Mount
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
20 V
Collector Emitter Breakdown Voltage
12 V
Collector Emitter Voltage (VCEO)
12 V
Emitter Base Voltage (VEBO)
2 V
Frequency
8 GHz
Gain
16 dB
Max Breakdown Voltage
12 V
Max Collector Current
80 mA
Max Operating Temperature
150 °C
Max Power Dissipation
580 mW
Min Operating Temperature
-55 °C
Noise Figure
1.3 dB
Number of Elements
1
Package Quantity
3000
Packaging
Tape & Reel
Polarity
NPN
Power Dissipation
580 mW
Power Gain
16 dB
Transition Frequency
8 GHz

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