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Infineon BFR181WH6327XTSA1

RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, L Band, Silicon, NPN

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Compliance

Halogen Free
Halogen Free
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Physical

Case/Package
SOT
Mount
Surface Mount
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
20 V
Collector Emitter Breakdown Voltage
12 V
Collector Emitter Voltage (VCEO)
12 V
Emitter Base Voltage (VEBO)
2 V
Frequency
8 GHz
Gain
19 dB
hFE Min
50
Max Breakdown Voltage
12 V
Max Collector Current
20 mA
Max Operating Temperature
150 °C
Max Power Dissipation
175 mW
Min Operating Temperature
-65 °C
Noise Figure
0.9 dB
Number of Elements
1
Package Quantity
3000
Packaging
Tape & Reel
Polarity
NPN
Power Dissipation
175 mW
Power Gain
19 dB
Termination
SMD/SMT
Test Frequency
900 MHz
Transition Frequency
8 GHz

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