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Infineon BFP842ESDH6327XTSA1

BFP842ESD Series NPN 120 mW 3.7 V 40 mA Low Noise Bipolar RF Transistor -SOT-343

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Compliance

Halogen Free
Halogen Free
Lead Free
Lead Free
REACH SVHC
No SVHC
RoHS
Compliant

Physical

Case/Package
SOT-343
Contact Plating
Tin
Mount
-55 °C
Number of Pins
4

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
4.1 V
Collector Emitter Breakdown Voltage
3.7 V
Collector Emitter Voltage (VCEO)
3.25 V
Continuous Collector Current
40 mA
Emitter Base Voltage (VEBO)
4.1 V
Frequency
60 GHz
Gain
26 dB
Max Breakdown Voltage
3.7 V
Max Collector Current
40 mA
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Noise Figure
0.4 dB
Package Quantity
3000
Packaging
Tape & Reel
Polarity
NPN
Power Gain
23.5 dB
Transition Frequency
60 GHz

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