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Infineon BFP740FH6327XTSA1

BFP740F: 4.7 V 30 mA Low Noise Silicon Germanium Bipolar RF Transistor - TSFP-4

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Compliance

Halogen Free
Halogen Free
Lead Free
Lead Free
REACH SVHC
No SVHC
RoHS
Compliant

Physical

Case/Package
SMD/SMT
Contact Plating
Tin
Mount
-65 °C
Number of Pins
4

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
13 V
Collector Emitter Breakdown Voltage
4.7 V
Collector Emitter Voltage (VCEO)
4 V
Emitter Base Voltage (VEBO)
1.2 V
Frequency
42 GHz
Gain
27.5 dB
Max Breakdown Voltage
4.7 V
Max Collector Current
30 mA
Max Operating Temperature
45 mA
Max Power Dissipation
150 °C
Min Operating Temperature
-65 °C
Noise Figure
0.5 dB
Number of Elements
1
Package Quantity
3000
Packaging
Tape & Reel
Polarity
NPN
Power Dissipation
160 mW
Power Gain
27.5 dB
Transition Frequency
42 GHz

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