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Infineon BFP740ESDH6327XTSA1

Bipolar - RF Transistor, NPN, 4.7 V, 45 GHz, 160 mW, 45 mA, 160

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Compliance

Halogen Free
Halogen Free
Lead Free
Lead Free
RoHS
Compliant

Physical

Case/Package
SOT
Contact Plating
Tin
Mount
-55 °C
Number of Pins
4

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
4.9 V
Collector Emitter Breakdown Voltage
4.7 V
Collector Emitter Voltage (VCEO)
4.2 V
Frequency
45 GHz
Gain
8.5 dB
Max Breakdown Voltage
4.7 V
Max Collector Current
35 mA
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Noise Figure
0.6 dB
Number of Elements
1
Package Quantity
3000
Packaging
Tape & Reel
Polarity
NPN
Power Dissipation
160 mW
Power Gain
27 dB
Transition Frequency
45 GHz

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