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Infineon BFP650H6327XTSA1

Transistor: NPN, bipolar, RF, 13V, 150mA, 500mW, SOT343

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Compliance

Halogen Free
Halogen Free
Lead Free
900 µm
RoHS
Compliant

Dimensions

Height
900 µm
Length
2 mm
Width
1.25 mm

Physical

Case/Package
SOT
Contact Plating
Tin
Mount
-65 °C
Number of Pins
4

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
13 V
Collector Emitter Breakdown Voltage
4.5 V
Collector Emitter Voltage (VCEO)
4 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
1.2 V
Frequency
41 GHz
Gain
21.5 dB
Max Breakdown Voltage
4.5 V
Max Collector Current
150 mA
Max Frequency
37 GHz
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-65 °C
Noise Figure
0.8 dB
Number of Elements
1
Package Quantity
3000
Packaging
Tape & Reel
Polarity
NPN
Power Dissipation
500 mW
Power Gain
21.5 dB
Transition Frequency
37 GHz

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