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Infineon BFP540ESDH6327XTSA1

NPN Silicon RF Transistor for ESD protected high gain low noise amplifier, SOT343, RoHS

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Compliance

Halogen Free
Halogen Free
Lead Free
Lead Free
RoHS
Compliant

Physical

Case/Package
SOT
Contact Plating
Tin
Mount
-65 °C
Number of Pins
4

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
10 V
Collector Emitter Breakdown Voltage
5 V
Collector Emitter Voltage (VCEO)
4.5 V
Emitter Base Voltage (VEBO)
1 V
Frequency
30 GHz
Gain
21.5 dB
Max Breakdown Voltage
5 V
Max Collector Current
80 mA
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-65 °C
Noise Figure
0.9 dB
Number of Elements
1
Package Quantity
3000
Packaging
Tape & Reel
Polarity
NPN
Power Dissipation
250 mW
Power Gain
21.5 dB
Transition Frequency
30 GHz

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