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Infineon BFP520H6327XTSA1

Transistor: NPN, bipolar, RF, 2.5V, 40mA, 100mW, SOT343

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Compliance

Halogen Free
Halogen Free
Lead Free
900 µm
Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
900 µm
Length
2 mm
Width
1.25 mm

Physical

Case/Package
SOT
Contact Plating
Tin
Mount
-55 °C
Number of Pins
4

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
10 V
Collector Emitter Breakdown Voltage
3.5 V
Collector Emitter Voltage (VCEO)
2.5 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
1 V
Frequency
45 GHz
Gain
22.5 dB
Max Breakdown Voltage
3.5 V
Max Collector Current
40 mA
Max Frequency
6 GHz
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Noise Figure
0.95 dB
Number of Elements
1
Package Quantity
3000
Packaging
Tape & Reel
Polarity
NPN
Power Dissipation
100 mW
Power Gain
23.5 dB
Transition Frequency
45 GHz

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