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Infineon BFP420H6327XTSA1

RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, L Band, Silicon, NPN

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Compliance

Halogen Free
Halogen Free
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1 mm

Physical

Case/Package
SOT
Mount
Surface Mount
Number of Pins
4

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
15 V
Collector Emitter Breakdown Voltage
5 V
Collector Emitter Voltage (VCEO)
4.5 V
Emitter Base Voltage (VEBO)
1.5 V
Frequency
25 GHz
Gain
21 dB
hFE Min
60
Max Breakdown Voltage
5 V
Max Collector Current
35 mA
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
160 mW
Min Operating Temperature
-65 °C
Noise Figure
1.1 dB
Number of Elements
1
Package Quantity
3000
Packaging
Tape & Reel
Polarity
NPN
Power Dissipation
210 mW
Power Gain
21 dB
Termination
SMD/SMT
Test Frequency
1.8 GHz
Transition Frequency
25 GHz

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