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Infineon BCW68GE6327HTSA1

Bipolar (BJT) Transistor PNP 45 V 8 mA 2MHz 33 mW Surface Mount SOT-23-3

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Compliance

Halogen Free
Not Halogen Free
Lead Free
900 µm
Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
900 µm
Length
2.9 mm
Width
1.3 mm

Physical

Case/Package
SOT
Contact Plating
Tin
Mount
-65 °C
Number of Pins
3

Supply Chain

Lifecycle Status
NRND

Technical

Collector Base Voltage (VCBO)
60 V
Collector Emitter Breakdown Voltage
45 V
Collector Emitter Saturation Voltage
700 mV
Collector Emitter Voltage (VCEO)
45 V
Continuous Collector Current
800 mA
Current Rating
-800 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
2 V
Frequency
200 MHz
Max Breakdown Voltage
45 V
Max Collector Current
800 mA
Max Frequency
200 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-65 °C
Number of Elements
1
Package Quantity
3000
Packaging
Cut Tape (CT)
Polarity
PNP
Power Dissipation
Tape & Reel
Transition Frequency
200 MHz
Voltage Rating (DC)
-45 V

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